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IXTR40P50P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTR40P50P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2012 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C - 500 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ - 500 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C - 22 A I DM T C = 25°C, Pulse Width Limited by TJM -120 A I A T C = 25°C - 40 A E AS T C = 25°C 3.5 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 312 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C V ISOL 50/60 H Z ,RMS, t= 1min 2500 V~ M d Mounting Force 20..120/4.5..27 N/lb. Weight 5 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250μA - 500 V V GS(th) V DS = VGS, ID = -1mA - 2.0 - 4.0 V I GSS V GS = ±20V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V - 50 μA T J = 125°C - 250 μA R DS(on) V GS = -10V, ID = - 20A, Note 1 260 m Ω PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR40P50P V DSS = - 500V I D25 = - 22A R DS(on) ≤ ≤≤≤≤ 260m Ω Ω Ω Ω Ω DS99937C(12/12) Features Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode The Rugged PolarPTM Process Low Q G Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators G = Gate D = Drain S = Source ISOPLUS247 E153432 G S D Isolated Tab |
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