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3SK223 Datasheet(PDF) 1 Page - NEC

Part No. 3SK223
Description  RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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3SK223 Datasheet(HTML) 1 Page - NEC

   
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©
1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
FEATURES
The Characteristic of Cross-Modulation is good.
CM = 101 dB
µ TYP. @ f = 470 MHz, GR = –30 dB
Low Noise Figure:
NF1 = 2.2 dB TYP. (f = 470 MHz)
NF2 = 0.9 dB TYP. (f = 55 MHz)
High Power Gain:
GPS = 20 dB TYP. (f = 470 MHz)
Enhancement Type.
Suitable for use as RF amplifier in CATV tuner.
Automatically Mounting:
Embossed Type Taping
Small Package:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSX
18
V
Gate1 to Source Voltage
VG1S
±8 (±10)*1
V
Gate2 to Source Voltage
VG2S
±8 (±10)*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
*1
RL
≥ 10 kΩ
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
1989
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.3
1. Source
2. Drain
3. Gate 2
4. Gate 1


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