VS-GB50LA120UX datasheet(4/10 Pages) VISHAY

Part #	VS-GB50LA120UX

Description	Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-GB50LA120UX

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Vishay Semiconductors

Revision: 30-Jul-13

4

Document Number: 93102

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Typical IGBT Threshold Voltage

Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, VGE = 15 V

Fig. 7 - Maximum DC Forward Current vs.

Case Temperature

Fig. 8 - Typical Diode Forward Characteristics

Fig. 9 - Typical IGBT Energy Loss vs. IC

TJ = 125 °C, L = 500 μH, VCC = 600 V,

Rg = 5 , VGE = 15 V

Fig. 10 - Typical IGBT Switching Time vs. IC

TJ = 125 °C, L = 500 μH, VCC = 600 V,

Rg = 5 , VGE = 15 V

IC (mA)

0.0002

0.0004

0.0006

0.0008

0.001

3.0

5.5

4.0

4.5

5.0

3.5

T

J = 25 °C

T

J = 125 °C

TJ (°C)

10

50

90

30

70

130

110

150

2

6

4

5

3

100 A

50 A

25 A

IF - Continuous Forward Current (A)

010

30

50

20

40

60

70

80

0

160

100

120

140

20

40

60

80

VFM (V)

01

3

2

456

0

200

25

75

100

150

125

175

50

T

J = 125 °C

T

J = 25 °C

IC (A)

10

20

30

40

50

0

4

2

3

1

E

off

E

on

IC (A)

010

50

30

40

20

60

10

1000

100

t

d(off)

t

d(on)

t

f

t

r

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VS-GB50LA120UX Datasheet(PDF) 4 Page - Vishay Siliconix

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