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NTMFD4902NF Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFD4902NF Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 10 page NTMFD4902NF http://onsemi.com 3 THERMAL RESISTANCE MAXIMUM RATINGS Parameter FET Symbol Value Unit Junction−to−Ambient – Steady State (Note 3) Q1 RqJA 65.9 °C/W Q2 62.8 Junction−to−Ambient – Steady State (Note 4) Q1 RqJA 113.2 Q2 108 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Q1 RqJA 36.2 Q2 36.2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Break- down Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Q2 VGS = 0 V, ID = 1.0 mA 30 Drain−to−Source Break- down Voltage Temperature Coefficient Q1 V(BR)DSS / TJ 18 mV / °C Q2 15 Zero Gate Voltage Drain Current Q1 IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1 mA TJ = 125°C 10 Q2 VGS = 0 V, VDS = 24 V TJ = 25°C 500 Gate−to−Source Leakage Current Q1 IGSS VGS = 0 V, VDS = ±20 V ±100 nA Q2 ±100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA 1.2 2.2 V Q2 1.2 2.2 Negative Threshold Temper- ature Coefficient Q1 VGS(TH) / TJ 4.5 mV / °C Q2 4.0 Drain−to−Source On Resist- ance Q1 RDS(on) VGS = 10 V ID = 10 A 5.2 6.5 m W VGS = 4.5 V ID = 10 A 8.0 10 Q2 VGS = 10 V ID = 15 A 3.3 4.1 VGS = 4.5 V ID = 15 A 5.0 6.2 Forward Transconductance Q1 gFS VDS = 1.5 V, ID = 10 A 28 S Q2 35 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Q1 CISS VGS = 0 V, f = 1 MHz, VDS = 15 V 1150 pF Q2 1590 Output Capacitance Q1 COSS 360 Q2 813 Reverse Capacitance Q1 CRSS 105 Q2 83 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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