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THS4226 Datasheet(PDF) 2 Page - Texas Instruments |
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THS4226 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 41 page THS4221, THS4225 THS4222, THS4226 SLOS399G − AUGUST 2002 − REVISED JANUARY 2004 www.ti.com 2 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) UNIT Supply voltage, VS 16.5 V Input voltage, VI ±VS Output current, IO 100 mA Differential input voltage, VID 4 V Continuous power dissipation See Dissipation Rating Table Maximum junction temperature, TJ 150°C Maximum junction temperature, continuous operation, long term reliability TJ (2) 125°C Storage temperature range, Tstg −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300°C HBM THS4221/5 2500 V HBM THS4222/6 3000 V ESD ratings: CDM 1500 V ESD ratings: MM THS4221/5 150 V MM THS4222/6 200 V (1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE DISSIPATION RATINGS PACKAGE ΘJC ΘJA(1) POWER RATING(2) PACKAGE ΘJC (°C/W) ΘJA() (°C/W) TA ≤ 25°C TA = 85°C DBV (5) 55 255.4 391 mW 156 mW D (8) 38.3 97.5 1.02 W 410 mW DGN (8) (3) 4.7 58.4 1.71 W 685 mW DGK (8) 54.2 260 385 mW 154 mW DGQ (10) (3) 4.7 58 1.72 W 690 mW (1) This data was taken using the JEDEC standard High-K test PCB. (2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long term reliability. (3) The THS422x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the PowerPAD thermally enhanced package. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT Supply voltage (VS and VS ) Dual supply ±1.35 ±7.5 V Supply voltage, (VS+ and VS−) Single supply 2.7 15 V Input common-mode voltage range VS− + 1.1 VS+ − 1.1 V THS4221 AND THS4225 SINGLE PACKAGE/ORDERING INFORMATION PACKAGED DEVICES PLASTIC SMALL OUTLINE (D) SOT-23(1) PLASTIC MSOP(2) PowerPADE PLASTIC MSOP(2) (D) (DBV) SYM (DGN) SYM (DGK) SYM THS4221D THS4221DBV BFS THS4221DGN BFT THS4221DGK BHX THS4225D — — THS4225DGN BFU THS4225DGK BFY (1) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4221DBVT). (2) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4221DGNR). PowerPAD is a trademark of Texas Instruments. |
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