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2SK3431-Z Datasheet(PDF) 2 Page - NEC

Part No. 2SK3431-Z
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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Preliminary Data Sheet D14600EJ1V0DS00
2
2SK3431
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 42 A4.5
5.6
m
RDS(on)2
VGS = 4 V, ID = 42 A6.2
8.9
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 42 A30
60
S
Drain Leakage Current
IDSS
VDS = 40 V, VGS = 0 V10
µ A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0V
±10
µ A
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
6100
pF
Output Capacitance
Coss
1400
pF
Reverse Transfer Capacitance
Crss
700
pF
Turn-on Delay Time
td(on)
ID = 42 A, VGS(on) = 10 V, VDD = 20 V,
120
ns
Rise Time
tr
RG = 10
1800
ns
Turn-off Delay Time
td(off)
350
ns
Fall Time
tf
440
ns
Total Gate Charge
QG
ID = 83 A , VDD = 32 V, VGS = 10 V
110
nC
Gate to Source Charge
QGS
18
nC
Gate to Drain Charge
QGD
31
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V,
65
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
µ s
110
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 µs
Duty Cycle
1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
0
90 %
90 %
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
5
5
5
5
5
5
5
5
5
5
5
5
5




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