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BS829 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BS829
Description  DMOS Transistors (P-Channel)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BS829 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BS829
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at –ID = 100 µA, VGS = 0 V
–V(BR)DSS
400
430
V
Gate-Body Leakage Current, Forward
at –VGSF = 20 V, VDS = 0 V
–IGSSF
100
nA
Gate-Body Leakage Current, Reverse
at –VGSR = 20 V, VDS = 0 V
–IGSSR
100
nA
Drain Cutoff Current
at –VDS = 400 V, VGS = 0 V
–IDSS
500
µA
Gate-Source Threshold Voltage
at VGS = VDS, –ID = 250 µA
–VGS(th)
11.5
2.5
V
Drain-Source ON Resistance
at VGS = 5 V, –ID = 100 mA
RDS(on)
–40
50
Capacitance
at –VDS = 25 V, VGS = 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
CiSS
COSS
CrSS
200
30
10
pF
pF
pF
Switching Times
at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω
Turn-On Time
Turn-Off Time
ton
toff
10
50
ns
ns
Thermal Resistance Junction to Ambient Air
RthJA
3201)
K/W
1) Device on fiberglass substrate, see layout
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)


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