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BF821 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BF821
Description  Small Signal Transistors (PNP)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BF821 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
BF821
at –IC = 100 µA, IE = 0
BF823
–V(BR)CBO
–V(BR)CBO
300
250
V
V
Collector-Emitter Breakdown Voltage
BF823
at –IC = 10 mA, IB = 0
–V(BR)CEO
250
V
Collector-Emitter Breakdown Voltage
BF821
at RBE = 2.7 kΩ, –IC = 10 mA
–V(BR)CER
300
V
Emitter-Base Breakdown Voltage
at –IE = 100 µA, IC = 0
–V(BR)EBO
5––
V
Collector-Base Cutoff Current
at –VCB = 200 V, IE = 0
–ICBO
––10
nA
Collector-Emitter Cutoff Current
at RBE = 2.7 kΩ, –VCE = 250 V
at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C
–ICER
–ICER
50
10
nA
µA
Collector Saturation Voltage
at –IC = 30 mA, –IB = 5 mA
–VCEsat
––0.8
V
DC Current Gain
at –VCE = 20 V, –IC = 25 mA
hFE
50
Gain-Bandwidth Product
at –VCE = 10 V, –IC = 10 mA
fT
60
MHz
Feedback Capacitance
at –VCE = 30 V, –IC = 0, f = 1 MHz
Cre
––1.6
pF
Thermal Resistance Junction to Ambient Air
RthJA
4301)
K/W
1) Device on fiberglass substrate, see layout
BF821, BF823
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)


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