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BF421 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BF421
Description  Small Signal Transistors (PNP)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BF421 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
BF421
at –IC = 100 µA, IE = 0
BF423
–V(BR)CBO
–V(BR)CBO
300
250
V
V
Collector-Emitter Breakdown Voltage
BF423
at –IC = 10 mA, IB = 0
–V(BR)CEO
250
V
Collector-Emitter Breakdown Voltage
BF421
at RBE = 2.7 kΩ, at –IC = 10 mA
–V(BR)CER
300
––V
Emitter-Base Breakdown Voltage
at –IE = 100 µA, IC = 0
–V(BR)EBO
5––V
Collector-Base Cutoff Current
at –VCB = 200 V, IE = 0
–ICBO
––10
nA
Collector-Emitter Cutoff Current
at RBE = 2.7 kΩ, –VCE = 250 V
at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C
–ICER
–ICER
50
10
nA
µA
Collector Saturation Voltage
at –IC = 30 mA, –IB = 5 mA
–VCEsat
––0.8
V
DC Current Gain
at –VCE = 20 V, –IC = 25 mA
hFE
50
–––
Gain-Bandwidth Product
at –VCE = 10 V, –IC = 10 mA
fT
60
––MHz
Feedback Capacitance
at –VCE = 30 V, –IC = 0, f = 1 MHz
Cre
––1.6
pF
Thermal Resistance Junction to Ambient Air
RthJA
1501)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BF421, BF423


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