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BF420 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BF420
Description  Small Signal Transistors (NPN)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BF420 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
BF420
at IC = 100 µA, IB = 0
BF422
V(BR)CBO
V(BR)CBO
300
250
V
V
Collector-Emitter Breakdown Voltage
BF422
at IC = 10 mA, IE = 0
V(BR)CEO
250
V
Collector-Emitter Breakdown Voltage
BF420
at RBE = 2.7 kΩ, IC = 10 mA
V(BR)CER
300
V
Emitter-Base Breakdown Voltage
at IE = 100 µA, IB = 0
V(BR)EBO
5––
V
Collector-Base Cutoff Current
at VCB = 200 V, IE = 0
ICBO
––10
nA
Collector-Emitter Cutoff Current
at RBE = 2.7 kΩ, VCE = 250 V
at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C
ICER
ICER
50
10
nA
µA
Collector Saturation Voltage
at IC = 30 mA, IB = 5 mA
VCEsat
––0.6
V
DC Current Gain
at VCE = 20 V, IC = 25 mA
hFE
50
Gain-Bandwidth Product
at VCE = 10 V, IC = 10 mA
fT
60
MHz
Feedback Capacitance
at VCE = 30 V, IC = 0, f = 1 MHz
Cre
––1.6
pF
Thermal Resistance Junction to Ambient Air
RthJA
1501)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BF420, BF422


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