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BC856 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BC856
Description  Small Signal Transistors (PNP)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BC856 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
1.6
3.2
6
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
k
k
k
µS
µS
µS
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
110
200
420
90
150
270
180
290
520
220
450
800
Thermal Resistance Junction to Substrate
Backside
RthSB
3201)
K/W
Thermal Resistance Junction to Ambient Air
RthJA
4501)
K/W
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VCEsat
–VCEsat
90
250
300
650
mV
mV
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VBEsat
–VBEsat
700
900
mV
mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
–VBE
–VBE
600
660
750
800
mV
mV
Collector-Emitter Cutoff Current
at –VCE = 80 V
BC856
at –VCE = 50 V
BC857
at –VCE = 30 V
BC858, BC859
at –VCE = 80 V, Tj = 125 °C
BC856
at –VCE = 50 V, Tj = 125 °C
BC857
at –VCE = 30 V, Tj = 125 °C
BC858, BC859
at –VCB = 30 V
at –VCB = 30 V, Tj = 150 °C
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
–ICBO
–ICBO
0.2
0.2
0.2
15
15
15
4
4
4
15
5
nA
nA
nA
µA
µA
µA
nA
µA
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz
fT
150
MHz
1) Device on fiberglass substrate, see layout
BC856 THRU BC859


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