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BC807 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BC807
Description  Small Signal Transistors (PNP)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BC807 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BC807, BC808
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
-16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
250
400
600
Thermal Resistance Junction Substrate
Backside
RthSB
3201)
K/W
Thermal Resistance Junction to Ambient Air
RthJA
4501)
K/W
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
–VCEsat
––0.7
V
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
–VBE
––1.2
V
Collector-Emitter Cutoff Current
at –VCE = 45 V
BC807
at –VCE = 25 V
BC808
at –VCE = 25 V, Tj = 150 °C
–ICES
–ICES
–ICES
100
100
5
nA
nA
µA
Emitter-Base Cutoff Current
at –VEB = 4 V
–IEBO
100
nA
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
fT
100
MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
CCBO
12
pF
1) Device on fiberglass substrate, see layout
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)


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