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LPV7215 Datasheet(PDF) 1 Page - Texas Instruments |
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LPV7215 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 28 page tPD L-H tPD H-L 1 10 100 1000 3 8 13 18 V + = 1.8V TA = 25°C OVERDRIVE (mV) 0 1 2 3 4 5 6 0 100 200 300 400 500 600 700 800 900 SUPPLY VOLTAGE (V) 25°C -40°C 85°C VCM = 0.8V LPV7215 www.ti.com SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013 LPV7215Q Micropower, CMOS Input, RRIO, 1.8V, Push-Pull Output Comparator Check for Samples: LPV7215 1 FEATURES DESCRIPTION The LPV7215Q is an ultra low-power comparator with 2 • (For V+ = 1.8V, Typical Unless Otherwise a typical power supply current of 580 nA. It has the Noted) best-in-class power supply current versus • Ultra Low Power Consumption 580 nA propagation delay performance available among TI's • Wide Supply Voltage Range 1.8V to 5.5V low-power comparators. The propagation delay is as low as 4.5 microseconds with 100 mV overdrive at • Propagation Delay 4.5 µs 1.8V supply. • Push-Pull Output Current Drive @ 5V 19 mA Designed to operate over a wide range of supply • Temperature Range −40°C to 125°C voltages, from 1.8V to 5.5V, with ensured operation • Rail-to-Rail Input at 1.8V, 2.7V and 5.0V, the LPV7215Q is ideal for • Tiny 5-Pin SOT23 and SC70 Packages use in a variety of battery-powered applications. With rail-to-rail common mode voltage range, the LPV7215Q is well suited for single-supply operation. APPLICATIONS Featuring a push-pull output stage, the LPV7215Q • RC Timers allows for operation with absolute minimum power • Window Detectors consumption when driving any capacitive or resistive • IR Receiver load. • Multivibrators Available in a choice of space-saving packages, the • Alarm and Monitoring Circuits LPV7215Q is ideal for use in handheld electronics and mobile phone applications. The LPV7215Q is manufactured with TI's advanced VIP50 process. TYPICAL APPLICATION Figure 1. Supply Current vs. Supply Voltage Figure 2. Propagation Delay vs. Overdrive These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2005–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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