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BC327 Datasheet(PDF) 2 Page - General Semiconductor

Part No. BC327
Description  Small Signal Transistors (PNP)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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BC327 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
Current Gain Group-16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
Thermal Resistance Junction to Ambient Air
RthJA
2001)
K/W
Collector-Emitter Cutoff Current
at –VCE = 45 V
BC327
at –VCE = 25 V
BC328
at –VCE = 45 V, Tamb = 125 °C
BC327
at –VCE = 25 V, Tamb = 125 °C
BC328
–ICES
–ICES
–ICES
–ICES
2
2
100
100
10
10
nA
nA
µA
µA
Collector-Emitter Breakdown Voltage
at –IC = 10 mA
BC327
BC328
V(BR)CEO
V(BR)CEO
45
25
V
V
Collector-Emitter Breakdown Voltage
at –IC = 0.1 mA
BC327
BC328
V(BR)CES
V(BR)CES
50
30
V
V
Emitter-Base Breakdown Voltage
at –IE = 0.1 mA
V(BR)EBO
5––
V
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
–VCEsat
––0.7
V
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
–VBE
––1.2
V
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
fT
100
MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
CCBO
–12
pF
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC327, BC328


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