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BB729S Datasheet(PDF) 2 Page - General Semiconductor

Part # BB729S
Description  Tuner Diodes
Download  3 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BB729S Datasheet(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
272
BB729S
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
32
V
Leakage Current
at VR = 30 V
IR
––10
nA
Capacitance f = 1 MHz
at VR = 28 V
at VR = 1 V
Ctot
Ctot
2.4
36.0
2.9
42.0
pF
pF
Effective Capacitance Ratio, f = 1 MHz
at VR = 1 to 28 V
Ctot (1 V)
Ctot (28V)
13.5
Series Resistance
at f = 470 MHz, Ctot = 25 pF
rs
–0.80
Series Inductance
Ls
–2.5
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse
bias voltage of VR = 0.5 to 28 V is max. 2.5%


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