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BB729S Datasheet(PDF) 2 Page - General Semiconductor |
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BB729S Datasheet(HTML) 2 Page - General Semiconductor |
2 / 3 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified 272 BB729S Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage at IR = 100 µA V(BR)R 32 – – V Leakage Current at VR = 30 V IR ––10 nA Capacitance f = 1 MHz at VR = 28 V at VR = 1 V Ctot Ctot 2.4 36.0 – – 2.9 42.0 pF pF Effective Capacitance Ratio, f = 1 MHz at VR = 1 to 28 V Ctot (1 V) Ctot (28V) 13.5 – – – Series Resistance at f = 470 MHz, Ctot = 25 pF rs –0.80 – Ω Series Inductance Ls –2.5 – nH For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias voltage of VR = 0.5 to 28 V is max. 2.5% |
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