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2SK3386 Datasheet(PDF) 1 Page - NEC |
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2SK3386 Datasheet(HTML) 1 Page - NEC |
1 / 4 page © 1999,2000 MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14471EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark 5 shows major revised points. DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 m Ω MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 m Ω MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±34 A Drain Current (Pulse) Note1 ID(pulse) ±120 A Total Power Dissipation (TC = 25°C) PT 40 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 28 A Single Avalanche Energy Note2 EAS 78 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 3.13 °C/W Channel to Ambient Rth(ch-A) 125 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 (TO-251) (TO-252) 5 5 5 5 5 5 5 |
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