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1N914 Datasheet(PDF) 1 Page - General Semiconductor

Part No. 1N914
Description  SMALL SIGNAL DIODE
Download  1 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

1N914 Datasheet(HTML) 1 Page - General Semiconductor

  1N914 Datasheet HTML 1Page - General Semiconductor  
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1N914
SMALL SIGNAL DIODE
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ For general purpose and switching.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Peak Reverse Voltage
VRM
100
V
Maximum Average Rectified Current
Io
75
mA
Maximum Power Dissipation at Tamb = 25 °C
Ptot
500
mW
Maximum Junction Temperature
Tj
200
°C
Maximum Forward Voltage Drop at IF = 10 mA
VF
1.0
V
Maximum Reverse Current at VR = 20 V
IR
25
nA
VR = 75 V
5.0
µA
Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V,
RL = 100
Ω, to Irr = 1 mA
trr
4.0
ns
Maximum Capacitance at VR=0, f=1.0 MHZ
Ctot
4.0
pF
11/09/98
Dimensions in inches and (millimeters)
DO-35
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)


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