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2N3418S Datasheet(PDF) 3 Page - Microsemi Corporation |
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2N3418S Datasheet(HTML) 3 Page - Microsemi Corporation |
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3 / 6 page  T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 3 of 6 2N3418S thru 2N3421S ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Collector-Emitter Breakdown Current V(BR)CEO V IC = 50 mA, IB = 0 2N3418S, 2N3420S 2N3419S, 2N3421S 60 80 Collector-Emitter Cutoff Current ICEX 0.3 0.3 µA VBE = -0.5 V, VCE = 80 V VBE = -0.5 V, VCE = 120 V 2N3418S, 2N3420S 2N3419S, 2N3421S Collector-Base Cutoff Current VCE = 45 V, IB = 0 VCE = 60 V, IB = 0 2N3418S, 2N3420S 2N3419S, 2N3421S ICEO 5.0 5.0 µA Emitter-Base Cutoff Current VEB = 6.0 V, IC = 0 VEB = 8.0 V, IC = 0 IEBO 0.5 10 µA ON CHARACTERISTICS (1) Parameters / Test Conditions Symbol Min. Max. Unit Forward-Current Transfer Ratio hFE IC = 100 mA, VCE = 2.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 20 40 IC = 1.0 A, VCE = 2.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 20 40 60 120 IC = 2.0 A, VCE = 2.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 15 30 IC = 5.0 A, VCE = 5.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 10 15 Collector-Emitter Saturation Voltage VCE(sat) V IC = 1.0 A, IB = 0.1 A IC = 2.0 A, IB = 0.2 A 0.25 0.5 Base-Emitter Saturation Voltage IC = 1.0 A, IB = 0.1 A IC = 2.0 A, IB = 0.2 A VBE(sat) 0.6 0.7 1.2 1.4 V DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio |hfe| 1.3 0.8 IC = 0.1 A, VCE = 10 V, f = 20 MHz Output Capacitance Cobo pF VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz 150 NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. |
Similar Part No. - 2N3418S |
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Similar Description - 2N3418S |
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