MBM29DL32XTE datasheet(2/80 Pages) FUJITSU

Part #	MBM29DL32XTE

Description	32M (4M x 8/2M x 16) BIT Dual Operation

Download	80 Pages

Scroll/Zoom	100%

Manufacturer	FUJITSU [Fujitsu Component Limited.]

Direct Link	http://edevice.fujitsu.com/fmd/en/index.html

Logo

2 / 80 page

MBM29DL32XTE/BE-80/90/12

2

)(Continued)

In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under

this concept, the MBM29DL32XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size

combinations; 0.5 Mb/31.5 Mb, 4 Mb/28 Mb, 8 Mb/24 Mb, 16 Mb/16 Mb.

To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable

(OE) controls.

The MBM29DL32XTE/BE are pin and command set compatible with JEDEC standard E2PROMs. Commands

are written to the command register using standard microprocessor write timings. Register contents serve as

input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations.

Typically, each sector can be programmed and verified in about 0.5 seconds.

A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29DL32XTE/BE are erased when shipped from the

factory.

Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector

automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data

Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase

cycle has been completed, the devices internally reset to the read mode.

The MBM29DL32XTE/BE memories electrically erase the entire chip or all bits within a sector simultaneously

via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM

programming mechanism of hot electron injection.

Similar Part No. - MBM29DL32XTE

Manufacturer	Part #	Datasheet	Description
SPANSION	MBM29DL32XTE80	1Mb / 84P	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

Manufacturer	Part #	Datasheet	Description
Fujitsu Component Limit...	MBM29DL32XTD	1Mb / 84P	32M (4M X 8/2M X 16) BIT Dual Operation
Macronix International	MX23L3210	624Kb / 10P	32M-BIT (4M x 8 / 2M x 16) Mask ROM
Fujitsu Component Limit...	MBM29PDS322TE	694Kb / 66P	32M (2M x 16) BIT Page Dual Operation
Sharp Corporation	LH5332600	62Kb / 8P	CMOS 32M (4M x 8/2M x 16) MROM
Macronix International	MX29LV320E	1Mb / 68P	32M-BIT [4M x 8 / 2M x 16] 3V SUPPLY FLASH MEMORY
Fujitsu Component Limit...	MBM29F033C	478Kb / 46P	32M (4M X 8) BIT
Fujitsu Component Limit...	MBM29DL16XTD	1Mb / 76P	16M (2M x 8/1M x 16) BIT Dual Operation
Macronix International	MX29LV320CT	768Kb / 62P	32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
	MX29L3211	659Kb / 38P	32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
	MX29LA32XMT	913Kb / 72P	32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY