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IRF3808LPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF3808LPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page HEXFET® Power MOSFET This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 75 A IDM Pulsed Drain Current 550 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 430 mJ IAR Avalanche Current 82 A EAR Repetitive Avalanche Energy See Fig.12a, 12b, 15, 16 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mounted, Steady State) ––– 40 Thermal Resistance VDSS = 75V RDS(on) = 0.007Ω ID = 106A Description l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Benefits Typical Applications l Industrial Motor Drive D2Pak IRF3808SPbF TO-262 IRF3808LPbF IRF3808SPbF IRF3808LPbF 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 01, 2013 Base Part Number Form Quantity IRF3808LPbF TO-262 Tube 50 IRF3808LPbF Tube 50 IRF3808SPbF Tape and Reel Left 800 IRF3808STRLPbF Tape and Reel Right 800 IRF3808STRRPbF IRF3808SPbF D 2Pak Package Type Standard Pack Orderable Part Number |
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