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CPH6123-TL-E Datasheet(PDF) 2 Page - ON Semiconductor

Part # CPH6123-TL-E
Description  Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CPH6123-TL-E Datasheet(HTML) 2 Page - ON Semiconductor

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CPH6123 / CPH6223
No.7386-2/8
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)100mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(390)380
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(24)13
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)1A, IB=(--)50mA
(--115)90
(--230)130
mV
VCE(sat)2
IC=(--)2A, IB=(--)100mA
(--240)160
(--650)240
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)0.88
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA,RBE=0Ω
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(30)35
ns
Storage Time
tstg
(230)300
ns
Fall Time
tf
(18)25
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
CPH6123-TL-E
CPH6
3,000pcs./reel
Pb Free
CPH6223-TL-E
CPH6
3,000pcs./reel
Pb Free
VR
RB
VCC= --25V
VBE=5V
+
+
50Ω
INPUT
OUTPUT
RL
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC= --10IB1=10IB2= --1A
CPH6123
VR
RB
VCC=25V
VBE= --5V
+
+
50Ω
INPUT
OUTPUT
RL
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC=10IB1= --10IB2=1A
CPH6223


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