LM3433

www.ti.com

SNVS535B – OCTOBER 2007 – REVISED MARCH 2008

Electrical Characteristics

Symbol

Parameter

Conditions

Units

SUPPLY CURRENT

EN = CGND

3

19

µA

1.0

mA

300

µA

EN = CGND

35

71

OUTPUT CURRENT CONTROL

Current sense target voltage;

57

60

63

mV

15

16.67

18

V/V

1.5V w.r.t. CGND

Isense Input Current

-50

µA

10

Isense Input Current

60

µA

1

Gm

CS to COMP

Transconductance; Gm =

0.6

1.3

2.2

mS

ON TIME CONTROL

On time threshold

230

287

334

mV

time event

GATE DRIVE AND INTERNAL REGULATOR

6.3

6.75

7.1

V

33

53

mA

HO output low resistance

I = 50mA source

2

Ω

HO output high resistance

I = 50mA sink

3

LO output low resistance

I = 50mA source

2

Ω

LO output high resistance

I = 50mA sink

3

DIMO output low resistance

I = 5mA source

20

Ω

DIMO output high resistance

I = 5mA sink

30

FUNCTIONAL CONTROL

With respect to CGND

1.4

V

6.0

6.6

7.0

V

thresholds

Off threshold

4.9

5.4

5.8

Enable threshold, with respect

Device on w.r.t. CGND

1.6

V

to CGND

Device off w.r.t. CGND

0.6

Enable pin pullup resistor

100

k

Ω

DIM logic input threshold

DIM rising threshold w.r.t.

1.6

CGND

V

DIM falling threshold w.r.t.

0.6

CGND

DIM pin pulldown resistor

100

k

Ω

ADJ pin current

-1.0

1.0

µA

(1)

All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits

are 100% production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control

(SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).

(2)

Typical numbers are at 25°C and represent the most likely norm.

Copyright © 2007–2008, Texas Instruments Incorporated

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