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2SK3204 Datasheet(PDF) 1 Page - NEC |
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2SK3204 Datasheet(HTML) 1 Page - NEC |
1 / 4 page © 1998, 1999 MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D13796EJ1V0DS00 (1st edition) Date Published April 1999 NS CP (K) Printed in Japan DATA SHEET The mark • • • • shows major revised points. DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance : RDS(on)1 = 34 m Ω (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 m Ω (MAX.) (VGS = 4 V, ID = 8 A) • Low Ciss : Ciss = 940 pF (TYP.) • Built-in gate protection diode. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Gate to Source Voltage VGSS(DC) +20, −10 V Drain Current (DC) ID(DC) ±15 A Drain Current (pulse) Note1 ID(pulse) ±45 A Total Power Dissipation (TA = 25 °C) PT 1.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 22.5 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V THERMAL RESISTANCE Channel to Ambient Rth(ch-A) 69.4 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. • • • • • • • • • • • • ORDERING INFORMATION PART NUMBER PACKAGE 2SK3204 MP-10 • • • • |
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