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2SK3105 Datasheet(PDF) 2 Page - NEC

Part No. 2SK3105
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SK3105 Datasheet(HTML) 2 Page - NEC

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Data Sheet D13293EJ1V0DS00
2
2SK3105
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = 30 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.6
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 1.5 A1
3.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 1.5 A56
95
m
RDS(on)2
VGS = 4.5 V, ID = 1.5 A
82
135
m
RDS(on)3
VGS = 4.0 V, ID = 1.5 A
91
150
m
Input Capacitance
Ciss
VDS = 10 V
211
pF
Output Capacitance
Coss
VGS = 0 V95
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
42
pF
Turn-on Delay Time
td(on)
VDD = 10 V12
ns
Rise Time
tr
ID = 1.0 A44
ns
Turn-off Delay Time
td(off)
VGS(on) = 10 V28
ns
Fall Time
tf
RG = 10
15
ns
Total Gate Charge
QG
VDS = 10 V2.1
nC
Gate to Source Charge
QGS
ID = 2.5 A0.61
nC
Gate to Drain Charge
QGD
VGS = 4.0 V0.84
nC
Diode Forward Voltage
VF(S-D)
IF = 2.5 A, VGS = 0 V0.81
V
Reverse Recovery Time
trr
IF = 2.5 A, VGS = 0 V15
ns
Reverse Recovery Charge
Qrr
di/dt = 90 A /
µs3.7
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
90 %
td(on)
tr
td(off)
tf
10 %
τ
RG = 10
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA


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