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2SK3105 Datasheet(PDF) 1 Page - NEC

Part No. 2SK3105
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SK3105 Datasheet(HTML) 1 Page - NEC

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13293EJ1V0DS00 (1st edition)
Date Published
June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4 V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 95 m
Ω MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 135 m
Ω MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)3 = 150 m
Ω MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3105
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±2.5
A
Drain Current (pulse)
Note1
ID(pulse)
±10
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t
≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XA
Gate
Drain


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