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RN1306TE85LF Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN1306TE85LF
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Download  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1306TE85LF Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN1301~RN1306
2010-04-06
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = 50V, IE = 0
―
―
100
Collector cut-off current
RN1301 to 1306
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1301
―
0.82
―
1.52
RN1302
―
0.38
―
0.71
RN1303
―
0.17
―
0.33
RN1304
―
VEB = 10V, IC = 0
0.082
―
0.15
RN1305
―
0.078
―
0.145
Emitter cut-off current
RN1306
IEBO
―
VEB = 5V, IC = 0
0.074
―
0.138
mA
RN1301
―
30
―
―
RN1302
―
50
―
―
RN1303
―
70
―
―
RN1304
―
80
―
―
RN1305
―
80
―
―
DC current gain
RN1306
hFE
―
VCE = 5V, IC = 10mA
80
―
―
―
Collector-emitter
saturation voltage
RN1301 to 1306
VCE (sat)
―
IC = 5mA,
IB = 0.25mA
―
0.1
0.3
V
RN1301
―
1.1
―
2.0
RN1302
―
1.2
―
2.4
RN1303
―
1.3
―
3.0
RN1304
―
1.5
―
5.0
RN1305
―
0.6
―
1.1
Input voltage (ON)
RN1306
VI (ON)
―
VCE = 0.2V, IC = 5mA
0.7
―
1.3
V
RN1301 to 1304
―
1.0
―
1.5
Input voltage (OFF)
RN1305, 1306
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
0.8
V
Transition frequency
RN1301 to 1306
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output
capacitance
RN1301 to 1306
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3
6
pF
RN1301
―
3.29
4.7
6.11
RN1302
―
7
10
13
RN1303
―
15.4
22
28.6
RN1304
―
32.9
47
61.1
RN1305
―
1.54
2.2
2.86
Input resistor
RN1306
R1
―
―
3.29
4.7
6.11
kΩ
RN1301 to 1304
―
0.9
1.0
1.1
RN1305
―
0.0421 0.0468 0.0515
Resistor ratio
RN1306
R1/R2
―
―
0.09
0.1
0.11
―


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