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RN1301 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. RN1301
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1301 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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RN1301~RN1306
2010-04-06
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301,RN1302,RN1303
RN1304,RN1305,RN1306
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
RN1301 to 1306
VCEO
50
V
RN1301 to 1304
10
Emitter-base voltage
RN1305, 1306
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN1301 to 1306
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 6 mg (typ.)
Unit: mm
Type No.
R1 (kΩ)R2 (kΩ)
RN1301
4.7
4.7
RN1302
10
10
RN1303
22
22
RN1304
47
47
RN1305
2.2
47
RN1306
4.7
47
USM


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