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CPDQT3V3U-HF Datasheet(PDF) 1 Page - Comchip Technology |
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CPDQT3V3U-HF Datasheet(HTML) 1 Page - Comchip Technology |
1 / 3 page CPDQT3V3U-HF Thru. CPDQT12V0U-HF Page 1 QW-JP039 REV:A Comchip Technology CO., LTD. RoHS Device Maximum Rating (TA=25°C unless otherwise Specifed) Company reserves the right to improve product design , functions and reliability without notice. kV mW 150 VESD PD °C -55 to +150 -55 to +150 TJ Junction temperature range Total power dissipation on FR-5 board @TA=25°C (Note 1) Parameter Symbol Value Unit ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Storage temperature range TSTG ±8 ±15 °C 260 (10 sec.) TL Lead Soldering Temperature - Maximum (10 second duration) °C Halogen Free Electrical Characteristics (TA=25°C unless otherwise noted, VF=0.9V Max.@ IF=10mA for all types) CPDQT3V3U-HF CPDQT5V0U-HF CPDQT12V0U-HF Part No. Max. 3.3 5.0 12 Min. 5.0 6.2 13.3 1 1 1 10.4 12.3 23.7 Max. 5.9 9.8 Max. 2.5 1.0 1.0 Typ. 80 65 30 8.7 Mechanical data - Case: 0402/SOD-882 small outline plastic package. - Terminals: Matte tin plated, solderable per MIL-STD-750, method 2026. - Mounting position: Any. - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 per Human Body Mode. - Response Time is Typically <1ns Features Circuit Diagram - Low Leakage CATHODE 1 2 ANODE Typ. 102 107 140 Max. IR (uA) @VRWM Dimensions in inches and (millimeter) 0402/SOD-882 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0.021(0.54) 0.015(0.37) 0.013(0.33) 0.012(0.30) 0.008(0.20) 0.017(0.44) 0.008(0.20) 0.015(0.37) Max. VRWN (V) IT (mA) IPP (A) (Note 3) VBR (V) @IT (Note 2) VC (V) @Max IPP (Note 3) PPK (8*20µs) (W) CJ (pF) Notes: 1. Other voltage available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C 3. Surge current waveform per Figure 3. SMD ESD Protection Diode Notes: 1. FR-5=1.0*0.75*0.62 in. |
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