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2SK3061 Datasheet(PDF) 6 Page - NEC |
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2SK3061 Datasheet(HTML) 6 Page - NEC |
6 / 8 page Data Sheet D13100EJ1V0DS00 6 2SK3061 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD L - Inductive Load - H 1.0 10 100 1 m10 m RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V Starting Tch = 25 °C IAS = 35 A 10 µ 100 µ 0.1 E AS = 122.5 mJ SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C 25 50 75 100 160 140 120 100 80 60 40 20 0 125 150 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 35 A 10.0 ± 0.3 3.2 ± 0.2 φ 4.5 ± 0.2 2.7 ± 0.2 2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2 2.54 1.3 ± 0.2 2.54 0.7 ± 0.1 12 3 1.Gate 2.Drain 3.Source Isolated TO-220 (MP-45F) Body Diode Source (S) Drain (D) Gate (G) PACKAGE DRAWING (Unit : mm) EQUIVALENT CIRCUIT Gate Protection Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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