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2SK3056 Datasheet(PDF) 1 Page - NEC |
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2SK3056 Datasheet(HTML) 1 Page - NEC |
1 / 8 page © 1998,1999 MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 m Ω MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 m Ω MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V Drain Current (DC) ID(DC) ±32 A Drain Current (Pulse) Note1 ID(pulse) ±100 A Total Power Dissipation (TC = 25°C) PT 34 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 16 A Single Avalanche Energy Note2 EAS 25.6 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 3.68 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3056 TO-220AB 2SK3056-S TO-262 2SK3056-ZJ TO-263 |
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