LM5073

SNVS490B – MARCH 2007 – REVISED FEBRUARY 2010

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Electrical Characteristics

(1) (continued)

to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values

otherwise indicated

(2).

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Programmed UVLO Reference Voltage

1.2

1.24

1.28

V

Programmed UVLO Hysteresis Current

16

20

24

µA

UVLORTN Pull Down Resistance

55

150

Ω

UVLO Filter

300

µs

Power Good

VDS Required for Power Good Status

1.3

1.5

1.7

V

VDS Hysteresis of Power Good Status

0.8

1

1.2

V

VGS Required for Power Good Status

4.5

5.5

6.5

V

Default Delay Time of Loss-of Power Good Status

30

µs

nPGOOD Current Source

40

55

70

µA

nPGOOD Open circuit Voltage

3.5

4

5.5

V

nPGOOD Pull Down Resistance

180

300

Ω

nPGOOD Threshold

2

2.5

3

V

Shutdown Outputs

nSD/SD Pull Down Resistance

180

300

Ω

Leakage

nSD/SD = 16V

1

µA

Hot Swap

RDS(ON)

Hot Swap MOSFET Resistance

0.7

1.5

Ω

Hot Swap MOSFET Leakage

100

µA

Inrush Current Limit

120

150

180

mA

Default DC Current Limit

380

440

510

mA

High DC Current Limit

690

800

930

mA

Current Limit Programming Accuracy

-12

12

%

Hot Swap Over-Voltage Protection

VIN OVP Threshold

60

65

70

V

VIN OVP Threshold, Hysteresis

3

V

Auxiliary Power Option

FAUX Threshold

8.1

8.7

9.5

V

FAUX Hysteresis

0.5

V

FAUX Pull Down Current

50

µA

RAUX Lower Threshold (I = 22 µA)

RAUX Pin Rising

2.3

2.7

3.4

V

RAUX Lower Threshold Hysteresis

0.8

V

RAUX Upper Threshold (I = 250 µA)

RAUX Pin Rising

5.4

6.2

7.4

V

RAUX Lower Threshold Current

14

22

30

µA

RAUX Upper Threshold Current

170

250

330

µA

Thermal Shutdown Temperature

165

°C

Thermal Shutdown Hysteresis

20

°C

Thermal Resistance

Junction to Ambient

PWP Package

40

°C/W

(3)

Device thermal limitations may limit usable range.

4

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