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FT0013C Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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FT0013C Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0013C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFR9130J Electrical Characteristics 3/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID =0.25 mA BVDSS -100 - 115 - V Drain to Source On State Resistance VGS = 10V, ID = 13A, Tj= 25 oC VGS = 10V, ID = 13A, Tj= 125 oC RDS(on) - - 60 100 90 - mΩ Gate Threshold Voltage VDS = 5 V, ID = 250A, Tj= 25 oC VDS = 5 V, ID = 250A, Tj= 125 oC VDS = 5 V, ID = 250A, Tj= -55 oC VGS(th) -2.0 -1.0 - -3.2 -2.5 -3.6 -4.0 - -5.0 V Gate to Source Leakage VGS = ±15V, Tj= 25 oC VGS = ±15V, Tj= 125 oC IGSS - - 1 10 ±50 ±200 nA Zero Gate Voltage Drain Current VDS = -100V, VGS = 0V, Tj = 25 oC VDS = -100V, VGS = 0V, Tj = 125 oC IDSS - - 0.01 5 10 250 A A Forward Transconductance VDS = 10V, ID = 10A, Tj = 25 oC gfs - 15 - Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 80V ID = 10A Qg Qgs Qgd - - - 23 8.5 5 40 - - nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 50V ID = 10A RG = 10 td(on) tr td(off) tf - - - - 65 25 75 30 100 50 150 50 nsec Diode Forward Voltage IF = 10A, VGS = 0V VSD - 0.85 1.5 V Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10A, di/dt = 100A/usec trr Qrr - - 55 135 85 - nsec nC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss - - - 3500 300 110 4000 400 200 pF PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE |
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