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LM5008A Datasheet(PDF) 2 Page - Texas Instruments |
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LM5008A Datasheet(HTML) 2 Page - Texas Instruments |
2 / 22 page 1 2 3 4 5 8 7 6 FB VIN VCC RT/SD SW BST RCL RTN 8 7 6 5 4 3 2 1 FB VIN Exposed Pad on Bottom Connect to Ground VCC RT/SD SW BST RCL RTN LM5008A SNVS583E – MARCH 2009 – REVISED APRIL 2011 www.ti.com Connection Diagram Figure 1. Top View 8-Lead LLP Figure 2. Top View 8-Lead MSOP Pin Functions Pin Descriptions Pin Name Description Application Information 1 SW Switching Node Power switching node. Connect to the output inductor, re-circulating diode, and bootstrap capacitor. 2 BST Boost Pin (Boot–strap capacitor An external capacitor is required between the BST and the SW pins. A 0.01 µF input) ceramic capacitor is recommended. An internal diode charges the capacitor from VCC during each off-time. 3 RCL Current Limit OFF time set pin A resistor between this pin and RTN sets the off-time when current limit is detected. The off-time is preset to 35 µs if FB = 0V. 4 RTN Ground pin Ground for the entire circuit. 5 FB Feedback input from Regulated This pin is connected to the inverting input of the internal regulation comparator. Output The regulation threshold is 2.5V. 6 RT/SD On time set pin A resistor between this pin and VIN sets the switch on time as a function of VIN. The minimum recommended on time is 400 ns at the maximum input voltage. This pin can be used for remote shutdown. 7 VCC Output from the internal high voltage This regulated voltage provides gate drive power for the internal Buck switch. series pass regulator. An internal diode is provided between this pin and the BST pin. A local 0.47 µF decoupling capacitor is required. The series pass regulator is current limited to 9 mA. 8 VIN Input voltage Input operating range: 6V to 95V. EP Exposed Pad The exposed pad has no electrical contact. Connect to system ground plane for reduced thermal resistance. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Links: LM5008A |
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