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LM3103 Datasheet(PDF) 2 Page - Texas Instruments

Part # LM3103
Description  SIMPLE SWITCHER짰 Synchronous 1MHz 0.75A Step-Down Voltage Regulator
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM3103 Datasheet(HTML) 2 Page - Texas Instruments

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LM3103
SNVS523E – SEPTEMBER 2007 – REVISED NOVEMBER 2009
www.ti.com
Typical Application
Connection Diagram
Figure 1. 16-Lead Plastic HTSSOP
Package Number PWP0016A
PIN DESCRIPTIONS
Pin
Name
Description
Application Information
1, 2
VIN
Input supply voltage
Supply pin to the device. Nominal input range is 4.5V to 42V.
3, 4
SW
Switch Node
Internally connected to the source of the main MOSFET and the drain of the synchronous
MOSFET. Connect to the output inductor.
5
BST
Connection for
Connect a 33 nF capacitor from the SW pin to this pin. This capacitor is charged through an
bootstrap capacitor
internal diode during the main MOSFET off-time.
6
AGND
Analog Ground
Ground for all internal circuitry other than the PGND pin.
7
SS
Soft-start
A 70 µA internal current source charges an external capacitor of larger than 22 nF to provide
the soft-start function.
8
NC
No Connection
This pin should be left unconnected.
9, 10
GND
Ground
Must be connected to the AGND pin for normal operation. The GND and AGND pins are not
internally connected.
11
FB
Feedback
Internally connected to the regulation and over-voltage comparators. The regulation setting is
0.6V at this pin. Connect to feedback resistors.
12
EN
Enable pin
Internal pull-up. Connect to a voltage higher than 1.6V to enable the device.
13
RON
On-time Control
An external resistor from the VIN pin to this pin sets the main MOSFET on-time.
14
VCC
Startup regulator
Nominally regulated to 6V. Connect a capacitor of larger than 1 µF between the VCC and
Output
AGND pins for stable operation.
15, 16
PGND
Power Ground
Synchronous MOSFET source connection. Tie to a ground plane.
DAP
EP
Exposed Pad
Thermal connection pad. Connect to the ground plane.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2007–2009, Texas Instruments Incorporated
Product Folder Links: LM3103


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