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2SK2858 Datasheet(PDF) 1 Page - NEC

Part No. 2SK2858
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SK2858 Datasheet(HTML) 1 Page - NEC

   
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1996, 1999
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
D11706EJ2V0DS00 (2nd edition)
Date Published
August 1999 NS CP(K)
Printed in Japan
The mark 5
5
5
5 shows major revised points.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2858
SC-70(SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (pulse)
Note
ID(pulse)
±0.4
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW
≤ 10
µs, Duty Cycle ≤ 1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G24
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
5


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