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F00213 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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F00213 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 3 page  Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF11N80 Series Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) BVDSS 800 –– –– Volts Drain to Source On State Resistance (VGS = 10V, ID = 5.5A) RDS(on) –– –– 0.95 Ω On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) ID(on) 11 –– –– A Gate Threshold Voltage (VDS = VGS, ID = 250µA) VGS(th) 2.0 –– 4.5 V Gate to Source Leakage (VGS = ±20V) IGSS –– –– ±100 nA Zero Gate Voltage Drain Current (VGS = 0V) VDS = 800V, TA = 25ºC VDS = 640V, TA = 125ºC IDSS –– –– –– –– 250 1.0 µA mA Forward Transconductance * (VDS > ID(on) x RDS(on) Max, ID = 5.5A) gfs 8.0 14 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 640V ID = 5.5A Qg Qgs Qgd –– –– –– 128 30 55 145 55 80 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDS = 400V ID = 5.5A RG = 2.0Ω td(on) tr td(off) tf –– –– –– –– 20 33 63 32 50 50 100 50 nsec Diode Forward Voltage * (IF = 11A, VGS = 0V) VSD –– –– 1.5 V Diode Reverse Recovery Time (IF = 11A, di/dt = 100A/µsec) trr –– –– 550 nsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz Ciss Coss Crss –– –– –– 4200 360 100 –– –– –– pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFF11N80M; SFF11N80MDB; SFF11N80MUB; SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 |
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Similar Description - F00213 |
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