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FGA15S125P Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FGA15S125P
Description  1250 V, 15 A Shorted-anode IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA15S125P Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGA15S125P Rev. C3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
10
20
30
40
50
60
70
80
VGE=17V
20V
15V
12V
9V
10V
8V
TC = 25
o
C
Collector-Emitter Voltage, VCE [V]
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
12V
9V
10V
8V
TC = 175
o
C
Collector-Emitter Voltage, VCE [V]
0123
456
789 10 11 12 13 14
0
10
20
30
40
50
Common Emitter
VCE = 20V
TC = 25
o
C
TC = 175
o
C
Gate-Emitter Voltage, VGE [V]
0.0
1.0
2.0
3.0
4.0
5.0
0
10
20
30
40
50
60
Common Emitter
VGE = 15V
TC = 25
o
C
TC = 175
o
C ---
Collector-Emitter Voltage, VCE [V]
0
4
8
12
16
20
0
5
10
15
20
30A
15A
IC = 7.5A
Common Emitter
TC = 25
o
C
Gate-Emitter Voltage, VGE [V]
25
50
75
100
125
150
175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
30A
IC = 7.5A
15A
Common Emitter
VGE = 15V
Case Temperature, TC [
o
C]


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