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PMDPB70XPE Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMDPB70XPE Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Relay driver High-speed line driver High-side load switch Switching circuits 1.4 Quick reference data [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB70XPE 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C ---20 V VGS gate-source voltage -12 - 12 V ID drain current VGS =-4.5V; Tamb =25°C; t ≤ 5 s [1] ---4.2 A Static characteristics (per transistor) RDSon drain-source on-state resistance VGS =-4.5V; ID =-2 A; Tj = 25 °C - 66 79 m Ω |
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