PMDPB70XPE datasheet(1/15 Pages) PHILIPS

Part #	PMDPB70XPE

Description	20 V dual P-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Trench MOSFET technology

 2 kV ElectroStatic Discharge (ESD)

protection

1.3 Applications

 Relay driver

 High-speed line driver

 High-side load switch

 Switching circuits

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMDPB70XPE

20 V dual P-channel Trench MOSFET

Rev. 1 — 20 June 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

VDS

drain-source voltage

Tj = 25 °C

---20

V

VGS

gate-source voltage

-12

-

12

V

ID

drain current

VGS =-4.5V; Tamb =25°C; t ≤ 5 s

[1]

---4.2

A

Static characteristics (per transistor)

RDSon

drain-source on-state

resistance

VGS =-4.5V; ID =-2 A; Tj = 25 °C

-

66

79

m

Ω

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