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L6207PD013TR Datasheet(PDF) 8 Page - STMicroelectronics |
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L6207PD013TR Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 33 page  Electrical characteristics L6207 8/33 DocID7513 Rev 2 4 Electrical characteristics Table 5. Electrical characteristics (Tamb = 25 °C, Vs = 48 V, unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit VSth(ON) Turn-on threshold 6.6 7 7.4 V VSth(OFF) Turn-off threshold 5.6 6 6.4 V IS Quiescent supply current All bridges OFF; Tj = -25 °C to 125 °C(1) 510 mA Tj(OFF) Thermal shutdown temperature 165 C Output DMOS transistors RDS(ON) High-side switch ON resistance Tj = 25 °C 0.34 0.4 W Tj = 125 °C(1) 0.53 0.59 W Low-side switch ON resistance Tj = 25 °C 0.28 0.34 W Tj = 125 °C(1) 0.47 0.53 W IDSS Leakage current EN = low; OUT = VS 2mA EN = low; OUT = GND -0.15 mA Source drain diodes VSD Forward ON voltage ISD = 2.8 A, EN = LOW 1.15 1.3 V trr Reverse recovery time If = 2.8 A 300 ns tfr Forward recovery time 200 ns Logic input VIL Low level logic input voltage -0.3 0.8 V VIH High level logic input voltage 2 7 V IIL Low level logic input current GND logic input voltage -10 µA IIH High level logic input current 7 V logic input voltage 10 µA Vth(ON) Turn-on input threshold 1.8 2.0 V Vth(OFF) Turn-off input threshold 0.8 1.3 V Vth(HYS) Input threshold hysteresis 0.25 0.5 V Switching characteristics tD(on)EN Enable to out turn ON delay time(2) ILOAD = 2.8 A, resistive load 100 250 400 ns tD(on)IN Input to out turn ON delay time ILOAD = 2.8 A, resistive load (deadtime included) 1.6 µs tRISE Output rise time(2) ILOAD = 2.8 A, resistive load 40 250 ns tD(off)EN Enable to out turn OFF delay time(2) ILOAD = 2.8 A, resistive load 300 550 800 ns tD(off)IN Input to out turn OFF delay time ILOAD = 2.8 A, resistive load 600 ns |
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