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TAS5614LA Datasheet(PDF) 4 Page - Texas Instruments

Part No. TAS5614LA
Description  150-W Stereo / 300-W Mono PurePath™ HD Digital-Input Class-D Power Stage
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TAS5614LA Datasheet(HTML) 4 Page - Texas Instruments

 
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TAS5614LA
SLAS846 – MAY 2012
www.ti.com
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
TAS5614LA
UNIT
VDD to GND, GVDD_X(2) to GND
–0.3 to 13.2
V
PVDD_X(2) to GND(3), OUT_X to GND(3), BST_X to GVDD_X(2)(3)
–0.3 to 50
V
BST_X to GND(3)(4)
–0.3 to 62.5
V
DVDD to GND
–0.3 to 4.2
V
AVDD to GND
–0.3 to 8.5
V
OC_ADJ, M1, M2, M3, C_START, INPUT_X to GND
–0.3 to 4.2
V
RESET, FAULT, OTW, CLIP, to GND
–0.3 to 4.2
V
Maximum continuous sink current (FAULT, OTW, CLIP)
9
mA
Maximum operating junction temperature range, TJ
0 to 150
°C
Storage temperature, Tstg
–40 to 150
°C
Lead temperature
260
°C
Human body model(4) (all pins)
±2
kV
Electrostatic discharge
Charged device model(4) (all pins)
±500
V
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
GVDD_X and PVDD_X represents a full bridge gate drive or power supply. GVDD_X is GVDD_AB or GVDD_CD, PVDD_X is
PVDD_AB or PVDD_CD
(3)
These voltages represents the DC voltage + peak AC waveform measured at the terminal of the device in all conditions.
(4)
Maximum BST_X to GND voltage is the sum of maximum PVDD to GND and GVDD to GND voltages minus a diode drop.
THERMAL INFORMATION
TAS5614LA
THERMAL METRIC(1)
UNITS
DDV (44-PIN)
θJH
Junction-to-heat sink thermal resistance(2)
2.3
θJCtop
Junction-to-case (top) thermal resistance
0.8
θJB
Junction-to-board thermal resistance
2.1
°C/W
ψJT
Junction-to-top characterization parameter
0.8
ψJB
Junction-to-board characterization parameter
2.1
θJCbot
Junction-to-case (bottom) thermal resistance
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
Thermal data are obtained with 85°C heat sink temperature using thermal compound with 0.7W/mK thermal conductivity and 2mil
thickness.
RECOMMENDED OPERATING CONDITIONS
MIN
TYP
MAX
UNIT
PVDD_X
Full-bridge supply
DC supply voltage
12
36
38
V
Supply for logic regulators and gate-drive
GVDD_X
DC supply voltage
10.8
12
13.2
V
circuitry
VDD
Digital regulator supply voltage
DC supply voltage
10.8
12
13.2
V
BTL
3.0
4.0
Output filter: L = 10 µH, 1 µF.
RL
Load impedance
SE
Output AD modulation,
1.5
3.0
switching frequency > 350 kHz.
PBTL
1.5
2.0
Minimum inductance at overcurrent limit,
LOUTPUT
Output filter inductance
including inductor tolerance, temperature
5
μH
and possible inductor saturation
FPWM
PWM frame rate
352
384
500
kHz
CPVDD
PVDD close decoupling capacitors
0.44
1
μF
BTL and PBTL configuration
100
nF
C_START
Startup ramp capacitor
SE and 1xBTL+2xSE configuration
1
μF
4
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): TAS5614LA


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