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PSMN015-60BS Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN015-60BS Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page PSMN015-60BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 1 March 2012 2 of 13 NXP Semiconductors PSMN015-60BS N-channel 60 V 14.8 m Ω standard level MOSFET in D2PAK 2. Pinning information [1] It is not possible to make connection to pin 2 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate SOT404 (D2PAK) 2 D drain[1] 3S source mb D mounting base; connected to drain mb 13 2 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version PSMN015-60BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS =20kΩ -60 V VGS gate-source voltage -20 20 V ID drain current VGS =10V; Tmb = 100 °C; see Figure 1 -36 A VGS =10V; Tmb = 25 °C; see Figure 1 -50 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb =25°C; see Figure 3 - 201 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 -86 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb =25°C - 50 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 201 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25°C; ID =50 A; Vsup ≤ 60 V; RGS =50 Ω; unclamped -44 mJ |
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