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PSMN4R5-40BS Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN4R5-40BS Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page PSMN4R5-40BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 22 March 2012 6 of 15 NXP Semiconductors PSMN4R5-40BS N-channel 40 V 4.5 m Ω standard level MOSFET in D2PAK 7. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V; Tj = -55 °C 36 --V ID = 250 µA; VGS =0V; Tj = 25 °C 40 --V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 11; see Figure 12 --4.6 V ID =1mA; VDS =VGS; Tj =175 °C; see Figure 11; see Figure 12 1 --V ID =1mA; VDS =VGS; Tj =25 °C; see Figure 11; see Figure 12 234V IDSS drain leakage current VDS =40V; VGS =0V; Tj = 25 °C - 0.02 3 µA VDS =40V; VGS =0V; Tj = 125 °C - - 60 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 10 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =175 °C; see Figure 13; see Figure 5 - 7.41 8.7 Ω VGS =10V; ID =25A; Tj =100 °C; see Figure 13; see Figure 5 -5.5 6.5 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 5 - 3.79 4.5 m Ω RG internal gate resistance (AC) f = 1 MHz - 0.97 - Ω Dynamic characteristics QG(tot) total gate charge ID =0A; VDS =0 V; VGS =10V - 35 - nC ID =25A; VDS =20V; VGS =10V; see Figure 14; see Figure 15 - 42.3 - nC QGS gate-source charge - 13.8 - nC QGS(th) pre-threshold gate-source charge -7.9 -nC QGS(th-pl) post-threshold gate-source charge -5.9 -nC QGD gate-drain charge - 8.8 - nC VGS(pl) gate-source plateau voltage ID =25A; VDS =20V; see Figure 14; see Figure 15 -4.8 -V Ciss input capacitance VDS =20V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 2683 - pF Coss output capacitance - 660 - pF Crss reverse transfer capacitance - 290 - pF td(on) turn-on delay time VDS =20V; RL =0.5 Ω; VGS =10 V; RG(ext) =4.7 Ω -19 -ns tr rise time - 23 - ns td(off) turn-off delay time - 30 - ns tf fall time -9 -ns |
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