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2SK2361 Datasheet(PDF) 1 Page - NEC

Part # 2SK2361
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SK2361 Datasheet(HTML) 1 Page - NEC

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MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2361: RDS (on) = 0.9
Ω (VGS = 10 V, ID = 5.0 A)
2SK2362: RDS (on) = 1.0
Ω (VGS = 10 V, ID = 5.0 A)
Low Ciss
Ciss = 1050 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362)
VDSS
450/500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse)
±40
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
100
W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
142
mJ
*
PW
≤ 10
µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25
Ω, VGS = 20 V → 0
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
5.45
4.7 MAX.
1.5
Body
Diode
Source
Drain
Gate
©
1995
DATA SHEET


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