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HT0909-30A Datasheet(PDF) 1 Page - RFHIC

Part No. HT0909-30A
Description  GaN Hybrid Power Amplifier
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Manufacturer  RFHIC [RFHIC]
Direct Link  http://www.rfhic.com
Logo RFHIC - RFHIC

HT0909-30A Datasheet(HTML) 1 Page - RFHIC

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GaN Hybrid Power Amplifier
HT0909-30A
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
All specifications may change without notice
US Facility : 919-677-8780 / sales@rfhicusa.com
1 / 8
Version 1.0
Product Features
Applications
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
• RF Sub-Systems
• Base Station
• Repeater
• LTE system
Description
The HT0909-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 925 ~ 960MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
CONDITION
Frequency Range
MHz
925
-
960
ZS = ZL = 50 ohm
Power Gain
dB
34
36
38
Amp : Idq1 = 110mA
Idq2 = 130mA
Gain Flatness
-
0.3
1.0
Input Return Loss
-
-15
-8
Pout @ Average
dBm
-
37
-
Pout @ Psat
dBm
44
45
-
Pulse Width=50us, 10%Duty
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-32
-28
Non DPD
-
-53
-
With DPD
Drain Efficiency
%
25
27
-
Pout @ Average
Ids
mA
-
650
710
Supply Voltage
V
-
-3.0
-2.0
Gate Bias (Vgs1 and Vgs2)
V
27.5
28
-
Main Bias(Vds)
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=37dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
Mechanical Specifications
PARAMETER
UNIT
TYP
REMARK
Mass
g
2
-
Dimension
20.5 x 15 x 3.5
-
Package Type : NP-1EL


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