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2SK3218-01 Datasheet(PDF) 3 Page - Fuji Electric |
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2SK3218-01 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 3 2SK3218-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=20A,VGS=10V Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tch [°C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA min. typ. max. 10 -2 10 -1 10 0 10 1 10 2 100p 1n 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz VDS [V] Ciss Coss Crss 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 30V 75V Vcc=120V Typical Gate Charge Characteristics VGS=f(Qg):ID=40A,Tch=25°C 0 25 50 75 100 125 150 Qg [nC] VGS VDS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 80 90 100 Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V VSD [V] 10 -1 10 0 10 1 10 2 10 1 10 2 10 3 10 4 ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω |
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