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2SK2688-01 Datasheet(PDF) 1 Page - Fuji Electric

Part No. 2SK2688-01
Description  N-channel MOS-FET
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Maker  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
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2SK2688-01 Datasheet(HTML) 1 Page - Fuji Electric

   
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2SK2688-01
N-channel MOS-FET
FAP-IIS Series
30V
0,017Ω ±50A 60W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
30
V
Continous Drain Current
I D
±50
A
Pulsed Drain Current
I D(puls)
±200
A
Gate-Source-Voltage
V GS
±16
V
Max. Avalanche Energy
E AV
520
mJ
Max. Power Dissipation
P D
60
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
L=0.277mH,Vcc=12V
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
30
V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
1,0
1,5
2,0
V
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
10
500
µA
VGS=0V
Tch=125°C
0,2
1,0
mA
Gate Source Leakage Current
I GSS
VGS=±16V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=25A
VGS=4V
0,012
0,017
ID=25A
VGS=10V
0,0075
0,01
Forward Transconductance
g fs
ID=25A
VDS=25V
22
45
S
Input Capacitance
C iss
VDS=25V
2750
4130
pF
Output Capacitance
C oss
VGS=0V
1300
1950
pF
Reverse Transfer Capacitance
C rss
f=1MHz
600
900
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=15V
13
20
ns
t r
ID=50A
180
270
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
55
83
ns
t f
RGS=10 Ω
150
230
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
50
A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
1,14
1,71
V
Reverse Recovery Time
t rr
IF=IDR VGS=0V
85
130
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
0,17
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-c)
channel to case
2,08
°C/W
R th(ch-a)
channel to air
125,0
°C/W


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