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STL35N6F3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL35N6F3
Description  N-channel 60 V, 0.019 廓, 10 A STripFET??III Power MOSFET in PowerFLAT??5x6 package
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL35N6F3 Datasheet(HTML) 3 Page - STMicroelectronics

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STL35N6F3
Electrical ratings
Doc ID 16557 Rev 4
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
The value is rated according to Rthj-c
Drain current (continuous) at TC = 25 °C
35
A
ID
(1)
Drain current (continuous) at TC = 100 °C
25
A
ID
(2)
2.
The value is rated according to Rthj-pcb
Drain current (continuous) at Tpcb = 25 °C
10
A
ID
(2)
Drain current (continuous) at Tpcb=100 °C
7
A
IDM
(3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
100
A
PTOT
(1)
Total dissipation at TC = 25 °C
80
W
PTOT
(2)
Total dissipation at Tpcb = 25 °C
5
W
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Thermal resistance junction-pcb max
31.3
°C/W
Rthj-case
Thermal resistance junction-case max.
1.9
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAV
Not-repetitive avalanche current
5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAV, VDD = 50 V)
409
mJ


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