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ZXMP6A17E6Q Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A17E6Q Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMP6A17E6Q Document Number: DS36685 Rev. 1 - 5 4 of 8 www.diodes.com January 2014 © Diodes Incorporated ZXMP6A17E6Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS = -60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 -3.0 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS (ON) 0.100 0.125 Ω VGS = -10V, ID = -2.3A 0.130 0.190 VGS = -4.5V, ID = -1.9A Forward Transconductance (Notes 9 & 10) gfs 4.7 S VDS = -15V, ID = -2.3A Diode Forward Voltage (Note 9) VSD -0.85 -0.95 V IS = -2.0A, VGS = 0V Reverse recovery time (Note 10) trr 25.1 ns IF = -1.7A, di/dt = 100A/μs Reverse recovery charge (Note 10) Qrr 27.2 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 637 pF VDS = -30V, VGS = 0V f = 1.0MHz Output Capacitance Coss 70 pF Reverse Transfer Capacitance Crss 53 pF Total Gate Charge (Note 11) Qg 9.8 nC VGS = -5.0V VDS = -30V ID = -2.3A Total Gate Charge (Note 11) Qg 17.7 nC VGS = -10V Gate-Source Charge (Note 11) Qgs 1.6 nC Gate-Drain Charge (Note 11) Qgd 4.4 nC Turn-On Delay Time (Note 11) tD(on) 2.6 ns VDD = -30V, VGS = -10V ID = -1.0A, RG 6.0Ω Turn-On Rise Time (Note 11) tr 3.4 ns Turn-Off Delay Time (Note 11) tD(off) 26.2 ns Turn-Off Fall Time (Note 11) tf 11.3 ns Notes: 9. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. |
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