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ZXRD1033PQ16 Datasheet(PDF) 25 Page - Diodes Incorporated

Part # ZXRD1033PQ16
Description  HIGH EFFICIENCY SIMPLESYNC??PWM DC-DC CONTROLLERS
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXRD1033PQ16 Datasheet(HTML) 25 Page - Diodes Incorporated

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS 20
V
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS=20V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS=± 12V,
VDS=0V
Gate-Source Threshold Voltage
VGS(th)
0.7
V
I
D=250µA, V
DS=
VGS
Static Drain-Source On-State
Resistance (1)
RDS(on)
0.040
0.050
VGS=4.5V, ID=3.8A
VGS=2.7V, ID=1.9A
Forward Transconductance (3)
gfs
6.1
S
VDS=10V,ID=1.9A
DYNAMIC (3)
Input Capacitance
Ciss
1100
pF
VDS=15 V,
VGS=0V, f=1MHz
Output Capacitance
Coss
350
pF
Reverse Transfer Capacitance
Crss
100
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
5.7
ns
VDD =10V, ID=3.8A
RG=6.2Ω, RD=2.6Ω
(Refer to test
circuit)
Rise Time
tr
9.6
ns
Turn-Off Delay Time
td(off)
28.3
ns
Fall Time
tf
11.6
ns
Total Gate Charge
Qg
16
nC
VDS=16V,VGS=4.5V
, I
D=3.8A
(Refer to test
circuit)
Gate-Source Charge
Qgs
3.5
nC
Gate Drain Charge
Qgd
5.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.95
V
Tj=25°C, IS=3.8A,
VGS=0V
Reverse Recovery Time (3)
trr
23.7
ns
Tj=25°C, IF=3.8A,
di/dt= 100A/
µs
Reverse Recovery Charge(3)
Qrr
13.3
nC
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Performance Characterisation of ZXM64N02X
ZXRD1000 SERIES
ISSUE 4 - OCTOBER 2000


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