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2SK2638-01MR Datasheet(PDF) 2 Page - Fuji Electric

Part No. 2SK2638-01MR
Description  N-channel MOS-FET
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Maker  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
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2SK2638-01MR Datasheet(HTML) 2 Page - Fuji Electric

   
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N-channel MOS-FET
2SK2638-01MR
450V
0,65Ω 10A
50W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch); ID=5A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Tch [°C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
ID [A]
Tch [°C]
Typical Capacitances vs. VDS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg); ID=10A; Tc=25°C
IF=f(VSD); 80µs pulse test; VGS=0V
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Avalanche Energy Derating
Safe Operation Area
Eas=f(starting Tch); VCC=45V; IAV=10A
ID=f(VDS): D=0,01, Tc=25°C
Transient Thermal impedance
10
12
Zthch=f(t) parameter:D=t/T
Starting Tch [°C]
VDS [V]
t [s]
This specification is subject to change without notice!


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